intelligent power devices (ipds) 1 publication date: september 2001 slb00029aed MIP512 (tentative) silicon mosfet type integrated circuit features ? built-in five protection functions (over-current, over-voltage, load- short-circuit, over heat, esd) ? both dc and ac power suply are available applications ? lamp solenoid, and led drive for amusement machine ? motor, relay drive for factory automation absolute maximum ratings t c = 25 c 3 c parameter symbol rating unit drain-source voltage v ds 45 v output current i o 2.0 a input voltage v in ? 0.5 to + 6.0 v input current i in 10 ma power dissipation * p d 1.0 w operating ambient temperature t opr ? 40 to + 85 c channel temperature t ch 150 c storage temperature t stg ? 55 to + 150 c block diagram marking symbol: MIP512 unit: mm 1 : in 2 : drain 3 : source mt-2-a1 package drain source over voltage protection load short-circuit protection gate cut-off circuit esd protection over current protection over heat protection in note) * : the value at mounting on the printed circuit board (glass epoxy board: 100 mm 100 mm). (t a = 25 c) 6.9 0.1 2.5 0.1 0.45 1.05 0.05 2.5 0.5 123 2.5 0.5 +0.10 ?0.05 0.45 +0.10 ?0.05 (0.8) (0.5) (1.0) (1.0) 4.5 0.1 14.5 0.5 4.0 0.7 0.65 max. (0.2)
MIP512 2 slb00029aed electrical characteristics t c = 25 c 3 c parameter symbol conditions min typ max unit drain-source on resistance r ds(on) v in = 5 v, i ds = 1 a 0.30 0.45 ? drain-source voltage v ds(on) v in = 5 v, i ds = 1 a 0.30 0.45 v drain clamp voltage v ds(clp) v in = 0 v, i ds = 3 ma 45 52 v drain off current 1 i ds(off)1 v in = 0 v, v ds = 12 v 5 20 a drain off current 2 i ds(off)2 v in = 0 v, v ds = 25 v 21 50 a drain off current 3 i ds(off)3 v in = 0 v, v ds = 40 v 55 120 a high level input voltage v in(h) i ds = 1 a 4 v low level input voltage v in(l) i ds = 1 ma 0.8 v input current (normal state) i in(on) v in = 5 v, v ds = 0 v 0.2 0.5 ma input current (protecting state) * i in(prot) v in = 5 v 0.45 1.00 ma over current limit value i ocp v in = 5 v 3.5 5.0 a load short-circuit detection voltage v ds(sht) v in = 5 v 2 4 v note) 1. when the drain voltage is more than load shot-circuited detection voltage at the output on state, output current oscilla tes. 2. when a drain voltage rises above a drain clamp voltage (over-voltage protection operating voltage), the output mos turns on and the drain voltage is clamped before breaking down between drain and source. *: the current value at the time when the load short-circuit protection and the over-heat protection are operating (for guarantee on design). electrical characteristics (reference value) parameter symbol conditions min typ max unit cut-off temperature at overheat t shd v in = 5 v 140 c note) 1. the above characteristic is for the reference and is not guarantee value. 2. when the chip surface temperature rise above the shutdown temperature at the over- heat, the output is shut down. when the chip surface temperature falls, operation starts again.
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